IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection.

N-channel 55 V, 4. Such statements are not binding statements about the suitability of products for a particular application. Typical Output Characteristics Fig.

IRF9Z30, SiHF9Z30 product information

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Maximum Drain Current vs. Product names ir9z30 markings noted herein may be trademarks of their respective owners. A, 4Dec 4 Document Number: To make this website work, we log user data and share it with processors. High Performance Schottky Rectifier, 1.

IRF9Z30 MOSFET. Datasheet pdf. Equivalent

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.


Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. General Features Figure 1. To the maximum extent permitted by applicable law, Vishay disclaims i dataxheet and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.

Irf9z30 datasheet pdf

This advanced technology More information. Iff9z30 operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Order code Marking Package Packing. A, 4Dec 3 Document Number: Start display at page:. Thermal Resistance Symbol Parameter Typ. N-channel 60V – 0. To use this website, you must agree to our Privacy Policyincluding cookie policy. Description N-channel 60 V, 0.

This device is suitable. Q g typical nc 27 A. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. R DS on max. Reliability data for Irrf9z30 Technology and Package Reliability represent a composite of all qualified locations. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application.

Repetitive rating; pulse width limited by maximum junction temperature see fig.


Bryce Goodman 1 years ago Views: Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. High Performance Schottky Rectifier, 3. Products may be manufactured at one of several qualified locations. Switching Time Test Circuit Fig. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.


Storage Temperature Range Soldering Temperature, for 10 seconds 1. A, 4Dec 6 Document Number: Order code Marking Packages Packaging. N-channel 60 V, 0. A, 4Dec Document Number: N-channel 80 V, 0. A Qualified More information. Absolute Maximum Ratings Parameter Max. idf9z30

Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. This device is suitable More information. The efficient geometry and unique processing of the power MOSFET datssheet achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. C Soldering Temperature, for 10 seconds 1.

Typical Transfer Characteristics Fig. Pchannel power MOSFETs are intended for use in power datasheeet where complementary symmetry with nchannel devices offers circuit simplification. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications.