Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.
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The absence of an energy gap, however, seriously jeopardizes the usage of this material for some important electronic applications, including digital circuits.
He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences poudfath July and is currently employed as a post-doctoral researcher. Mahdi Pourfath was born in Tehran, Iran, in He joined the Institute for Microelectronics in Maahdiwhere he received his doctoral degree in technical sciences in July and the venia docendi in microelectronics in March Hierarchical Device Simulation Christoph Jungemann. The Best Books of Mahdi Pourfath was born in Tehran, Iran, in Therefore the device characteristics can be well optimized by careful geometric design.
As shown in Pourfayh. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires, and low-dimensional thermoelectric devices and photodetectors are discussed. In short devices less than nm carrier transport through pourfaty device is nearly ballistic. Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction.
The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as suitable candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap.
Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier mobility. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time.
All simulations were based on the assumption of cylindrical symmetry. Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed. Furthermore, it can be inferred from the results that due to the smaller density of states and the resulting smaller quantum capacitance of GNRs as compared to graphene, better switching and frequency response can be achieved for VTGNRFETs.
The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts. Dispatched from the UK in 4 business days When will my order arrive?
mehdi pourfath – Personal page – دانشکده مهندسی برق و کامپیوتر دانشگاه تهران
To achieve more realistic results it is necessary to extend the codes to include 3D geometries. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies, and scattering self-energies, are pourfat and efficient methods for their evaluation are explained.
Overall mobility solidmobility in K-valleys dashedand mobility in Q-valleys dotted. His scientific interests include quantum transport, simulation of carbon nanotubes and nanoelectronic devices.
Description For modeling the transport of carriers in nanoscale devices, ;ourfath Green-function formalism is the most accurate approach. Back cover copy For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. In the mahhdi step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.
Even in the presence of extrinsic scattering sources, the gauge factors of these materials are much larger than those reported for most of the materials typically used for strain gauges. Mahdi Pourfath was born in Tehran, Iran, in Mahdi Pourfath MSc Dr.
The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation
The quasi-static approximation QSA was used to investigate the dynamic response of these devices. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. His research interests include nanoelectronics, quantum transport, and two-dimensionals.
The contact between metal and CNT can be of ohmic or Schottky type. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in Tight-binding calculations predict that zigzag GNRs are always metallic, while armchairs can be either metallic or pourrfath, depending on their width.
Mahdi Pourfath – Google Scholar Citations
Unlike conventional strain gauges where geometric and piezoelectric terms contribute to the gauge factor, in these materials the intervalley phonon-limited mobility is strongly affected by strain, which results in large gauge factors. Their electronic properties exhibit a dependence on the ribbon direction and width.
All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. By changing the gate voltage the transmission coefficient of holes through the device is modulated and, as a result, the total current changes.
Recently, a graphene TFET based on a vertical graphene heterostructure was proposed. His scientific interests include the numerical study of novel nanoelectronic devices. Home Contact Us Help Free delivery worldwide.